Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV

High-voltage field effect transistors with wide-bandgap -Ga2O3 nanomembranes

Articles you may be interested in Publisher's Note: " High-voltage field effect transistors with wide-bandgap-Ga2O3 nanomembranes " [Appl. Phys. Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors Appl. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Appl. Two-channe...

High-voltage field effect transistors with wide-bandgap b-Ga2O3 nanomembranes

nanomembranes Wan Sik Hwang, Amit Verma, Hartwin Peelaers, Vladimir Protasenko, Sergei Rouvimov, Huili (Grace) Xing, Alan Seabaugh, Wilfried Haensch, Chris Van de Walle, Zbigniew Galazka, Martin Albrecht, Roberto Fornari, and Debdeep Jena Department of Materials Engineering, Korea Aerospace University, Gyeonggi, 412791, South Korea Department of Electrical Engineering, University of Notre Dame,...

Vertical High-Voltage Transistors on Thick Silicon-on-Insulator

A Low-Voltage Current-Mode Wheatstone Bridge using CMOS Transistors

This paper presents a new circuit arrangement for a current-mode Wheatstone bridge that is suitable for low-voltage integrated circuits implementation. Compared to the other proposed circuits, this circuit features severe reduction of the elements number, low supply voltage (1V) and low power consumption (<350uW). In addition, the circuit has favorable nonlinearity error (<0.35%), operate with ...

Enhancement-mode quantum transistors for single electron spin

Using an InAs/GaSb composite quantum well, we demonstrate an enhancement mode single electron transistor. With a Hall bar geometry, we show that the device undergoes a transition from accumulation of two-dimensional (2D) holes in GaSb to a complete depletion and finally to an inversion layer of 2D electrons in InAs. When the top-gate area is reduced to nanometer scale, the inversion electrons a...